electron injection
英 [ɪˈlektrɒn ɪnˈdʒekʃn]
美 [ɪˈlektrɑːn ɪnˈdʒekʃn]
网络 电子注入; 电子注射
双语例句
- The mechanism of the photoinduced electron injection was also discussed through ESR spectra.
同时通过ESR光谱讨论了光诱导电子注入机制。 - Theoretic analysis and calculation show that the electron injection by pulsed E X B drift can trigger the H mode without direct contact with plasma and could realize the feedback control for the H mode.
理论分析和计算指出，用E×B脉冲漂移注入电子能够触发H模，且可避免任何物质装置与等离子体直接接触，同时还可实现H模的反馈控制。 - By using LiBq_4 as the electron injection layer, the device ′ s performance with regard to luminance, current efficiency, and turn-on voltage was superior to that of the device using LiF as the electron injection layer.
采用LiBq4作为电子注入层，实验结果表明，器件的亮度、电流效率和起亮电压等性能均有改善，超过了采用LiF作为电子注入层的器件。 - The first step is the creation of trap centers in ultra-thin gate oxides by hot electron injection, and the second step is oxides breakdown induced by hole trapping.
首先注入的热电子在超薄栅氧化层中产生陷阱中心，然后空穴陷入陷阱导致超薄栅氧击穿。 - This Paper studies the properties of neutral traps in soft X-ray beam irradiated SiO2 with the avalanche hot electron injection and MOS C-V techniques.
本文用雪崩热电子注入技术与MOSC-V技术，研究了软X射线辐照引入于SiO2中的中性陷阱的性质。 - Hot carrier effects under AC ( Alternating Current) stress are investigated in this paper. Alternative hot hole and hot electron injection effects on the degradation of NMOSFET ′ s under pulse stress are discussed mainly.
本文研究了交流应力下的热载流子效应，主要讨论了脉冲应力条件下的热空穴热电子交替注入对NMOSFET′s的退化产生的影响。 - With the decrease of stress voltage, the device degradation is caused by electron injection.
在高场应力下器件退化是由空穴注入或者电子与空穴复合引起的，随着应力电压的下降器件退化主要是由电子注入引起的。 - The movement of electron injection in the periodic focusing system using permanent magnet and the pulsation of electron injection when the magnetic intensity was unfit, and the relationship between the transmittance of electron beam and the magnet intensity were studied.
主要讲述了电子注在周期永磁聚焦系统中的运动和磁场选择不当时电子注的脉动情况以及电子注流通率与磁场强度的关系。 - The Electron Injection Characteristics of the Nitrogen-Rich SiO_xN_y Film
富氮SiOxNy膜的电子注入特性 - The experimental result showed that the strong interreaction of the carboxylate group with nanocrystalline TiO2 films realized electron injection from the excited state of the complex into the conduction band of nanocrystalline TiO2 films electrode and so made solar-to-electric energy conversion efficiency enhance.
实验结果表明，通过羧酸基与纳米晶TiO2薄膜电极发生强相互作用，实现了染料激发态向纳米晶TiO2薄膜电极导带高效注入电子，从而使宽禁带半导体的光电转换效率得到提高。 - By testing the electrical characteristic changes before and after the injection, the electron injection characteristics were studied. The relation between the capacities of anti_injection and the fabricated conditions was found.
测试了薄膜在电子注入前后电学参数的变化，以研究薄膜的电子注入特性，探求薄膜的抗电子注入能力与制备工艺之间的关系。 - From the respects of the electron injection system, the load sensing steering system and the energy conservation shifted gears principles, this paper elaborates their basic principle and energy conservation function in the application of the engineering vehicles.
本文主要从电子喷射系统、负荷传感转向系统和节能换档原则几方面阐述了它们在工程车辆应用中的基本原理和节能作用。 - The mechanism of current transport in the organic thin film device is analysed. It is shown that the current generated during electroluminescence is dependent on such factors as the thermal electron injection effect, space electric charge restrict effect, tunnelling effect and resistant effect.
分析了该器件的电流输运机理，认为该有机薄膜器件在电致发光时流过器件的电流受热电子注入效应、空间电荷限制效应、隧穿效应及器件电阻效应的影响。 - Effect of Sputtering Ion Pump of Electrostatic Saddle Field in the Electron Injection
静电马鞍场溅射离子泵在注入电子时的效果 - Study of Electron Injection of Polymer Light-emitting Devices with a Bilayer Cathode of BaO/ Al
双层阴极结构BaO/Al聚合物电致发光器件电子注入的研究 - NMOSFET ′ s after hot hole injection followed by hot electron injection produce serious degradation, which can be explained by neutral electron trap model and hot carrier induced gate oxide degradation under pulse stress.
NMOSFET′s在热空穴注入后，热电子随后注入时，会有大的退化量，这可以用中性电子陷阱模型和脉冲应力条件下热载流子注入引起的栅氧化层退化来解释。 - Study of Trap Characteristics of Nitrogen rich SiO_xN_y Thin Film in Nanometre Range by Avalanche Hot electron Injection
雪崩热电子注入研究富氮SiOxNy纳米级薄膜的陷阱特性 - Effects of Electron Injection on the Properties of CdSe Radiation Detectors
电子注入对CdSe探测器性能的影响 - These materials were characterized by techniques of H1-NMR and UV-Vis and calculated by computer simulation to analyze the potential influence of molecular structure on electron injection. Furthermore, a simple sol-gel method to make light scattering layers has been investigated.
利用H1-NMR、UV-Vis等技术对这些材料进行了表征，并结合计算机模拟的办法分析了结构对提高电子注入效率可能的影响。 - The traditional method is mainly focused on reducing barrier height between the cathode electrode and the organic layer to improve the electron injection efficiency, but this is a passive measure.
传统的阴极修饰法是侧重降低电极和有机层之间的势垒来提高电子的注入效率，是一种被动措施。 - Because of the introduction of the electron injection layer, the combination of the electron and hole in the emission layer enhanced greatly, which improved the luminescent properties of the device.
由于电子注入层／空穴阻挡层ZnO的引入，使电子和空穴在发光层的复合几率大大提高，提高了器件的发光性能。 - The results showed that the two laser pulses can enhance the electron injection due to the wake-field expanding. The injected-electron number is almost two times higher than that in a single laser pulse case with the same total laser energy.
数值模拟结果表明，利用双激光脉冲可以让尾波场在空间上得到扩张，从而有效增强电子注入，注入电子数接近同能量单激光脉冲情况的2倍。 - In order to improve the interface performance of metal Al and the organic layer, a thin interface layer of LiF or other small molecule material is usually asserted between the Al and organic layer, so as to improve the electron injection and device stability.
为了改善金属Al与有机层界面的性能，通常在Al与有机层之间加一层很薄的LiF界面层或其他小分子材料，用以提高电子注入性能和器件稳定性。 - The main topic is the low efficiency for electron injection, thereby causing imbalance of carrier recombination, resulting in low efficiency of light-emitting device, so the aim of this thesis is to improve the electron injection efficiency and luminous efficiency of the device.
本课题主要是针对电子注入效率低引起的载流子复合不平衡，最终影响器件的发光效率这一问题，而进行的研究工作，主要目的就是提高器件的电子注入效率。 - The simulation results show that the schemes are viable. Lastly, a scheme to enhance the electron injection in one-dimension space by two laser pulses is proposed, basing on the theory of laser ponderomotive force accelerating electrons.
而且数值模拟结果证实了上述两种方案预期结果。最后，基于一维激光脉冲前沿有质动力加速电子机制，提出利用双激光脉冲增强电子注入方案。 - The main content includes that: Firstly, we proposed a scheme to enhance the electron injection by two parallel-propagating coaxial non-synchronous laser pulses.
论文主要内容包括：首先，提出了利用同向同轴非同步的双激光脉冲增强激光尾波场中电子注入的方案。 - Analyzing the mechanism of electron injection and transporting by employing the n-type doping technology and multiple repeat cells in electron transporting layer ( ETL).
将n型掺杂与多重复单元结构应用于电子传输层中，分析电子的注入与传输机制。 - Electric drift electron injection is in plasma edge area normal to the direction of the longitudinal field on the applied electric field from an electron gun in this orthogonal under the effect of electromagnetic field levels in the drift to the plasma.
电场漂移电子注入是在等离子体边缘区域垂直于纵场的方向上加外加电场，从电子枪发出的电子在这正交电磁场的作用下水平的漂移到等离子体中。 - The correlation between the calculated electron energy in the oxide and the electric field in the silicon substrate indicates that the difference between hot electron injection and the FN tunneling can be explained in terms of the average electron energy in the oxide.
通过计算注入到氧化层中的电子能量和硅衬底的电场的关系表明，热电子注入和FN隧穿的不同可以用氧化层中电子的平均能量来解释。 - It is found that the electron injection barrier between ITO and the light-emitting layer can be significantly reduced at present of Al/ DPSF.
并发现Al/DPSF电子注入层的存在可以有效降低ITO与发光层之间的电子注入势垒。